EDN

GaN power transistors take aim at MOSFETs

I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
EDN

Nitronex : GaN power transistor addresses 2.5 and 3.5GHz markets

“Feedback from early customers confirms that the NPT1004 is an excellent fit for high peak to average power amplifiers for WiMAX and pulsed waveforms found in radar, telemetry and medical applications ...
Electronic Design

GaN Transistors Up the Game in Reliability and Power Efficiency

Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...
Business Wire

IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE ...
Business Insider

GaN Systems Announces World’s Highest Current Rated GaN Power Transistor

OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
The Financial

Panasonic Develops Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
Business Wire

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
Electronic Design

GaN Systems unveils 650 V GaN power transistors

OTTAWA, Ontario, Canada—GaN Systems, a global provider of GaN (gallium nitride) power semiconductors, has announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 ...
Design News

GaN Transistor Unlocks the Power of 5G

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...
NBC News

RF Micro Devices(R) Expands Family of GaN Unmatched Power Transistors

Nov. 9, 2010, 1:16 PM UTC / Source: GlobeNewswire GREENSBORO, N.C., Nov. 9, 2010 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of ...
New Electronics

Infineon unveils its first gallium nitride 100 V automotive-qualified transistors

Infineon has started supplying samples of its CoolGaN Automotive Transistor 100 V G1 family which is qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) ...
Phys.org

News on power transistors

A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...