GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...
GaN represents a pivotal advancement towards offering comprehensive signal chains for our target markets. Prior to this acquisition, Guerrilla RF was already advancing GaN device development as part ...
RF front ends are advancing through the integration of high-frequency passive networks with increasingly efficient active devices engineered for ultra-wide bandwidths and constrained power envelopes.
Delray Beach, FL, Feb. 21, 2025 (GLOBE NEWSWIRE) -- The report "RF Gallium Nitride Market by Device (Discrete RF Device, Integrated RF Device), wafer size, end user (Telecom Infrastructure, Satellite ...
Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
This article is part of the TechXchange: Gallium Nitride (GaN). NXP rolled out a family of gallium-nitride (GaN)-based RF power amplifiers (PAs) that uniquely leverages top-side cooling to reduce the ...
A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
Finwave Semiconductor, Inc. and GlobalFoundries (GF) have announced a strategic technology development and licensing agreement to accelerate the development and volume production of Finwave’s ...
The first generation of GaN transistors has yielded efficient devices that operate at 600V with turn-on and turn-off times of 3.5 nsec and 7.0 nsec, respectively. Switching times are improved through ...
(Nanowerk Spotlight) Advances in semiconductor technology have reached a critical turning point. Silicon-based transistor technology, central to electronics, faces increasing limitations due to the ...
First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...
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