Nature

Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple ...
EDN

BiCMOS Quad 2-input NAND Gate

The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...
EurekAlert!

A tiny vacuum tube that could outrun today’s transistors – no gate leak, no problem

For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of ...
EurekAlert!

SNU researchers develop world's first concealable PUF using V-NAND flash memory

(a) Schematic of the concealable PUF using V-NAND flash memory.(b) Circuit diagram of V-NAND flash memory.(c) Description of the GIDL erase method. Seoul National University College of Engineering ...