Researchers succeed in the direct bonding of diamond and gallium nitride (GaN) at room temperature and demonstrate that the bond can withstand heat treatments of 1,000 degrees Celsius, making it ideal ...

The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...

Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon ...