Abstract: In this study, we report the first experimental demonstration of a double-gated ferroelectric field-effect-transistor (DG-FeFET). Based on the TiO2 channel and HfLaO ferroelectric (FE) ...
A new theoretical study led by researchers at the University of Chicago and Argonne National Laboratory has identified the ...
Abstract: The unique photoelectric response properties of 2-D material (2DM)-based floating gate field-effect transistors (FGFETs) enable it for potential neuromorphic computing applications. However, ...
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